BFG67/X,215 Details_BFG67/X,215 PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1.3dB @ 1GHz
Gain	-
Power - Max	380mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 15mA, 5V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	SOT-143B

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