2SC4713KT146R Details_2SC4713KT146R PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	800MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 5mA, 5V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SMT3

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