HFA3135IH96 Details_HFA3135IH96 PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)	9V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	5.2dB @ 900MHz
Gain	-
Power - Max	-
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 10mA, 2V
Current - Collector (Ic) (Max)	26mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Supplier Device Package	SOT-23-6

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