TAN350 Details_TAN350 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)	-
Gain	7dB ~ 7.5dB
Power - Max	1450W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1A, 5V
Current - Collector (Ic) (Max)	40A
Operating Temperature	230°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55ST
Supplier Device Package	55ST

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