BFU550AVL Details_BFU550AVL PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	11GHz
Noise Figure (dB Typ @ f)	1.4dB @ 1.8GHz
Gain	12dB
Power - Max	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 15mA, 8V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TO-236AB (SOT23)

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