0912-45 Details_0912-45 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Frequency - Transition	960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)	-
Gain	8dB ~ 9dB
Power - Max	225W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 300mA, 5V
Current - Collector (Ic) (Max)	4.5A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55CT
Supplier Device Package	55CT

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