MRF1000MB Details_MRF1000MB PDF Document_MACOM Technology Solutions-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	10.7dB ~ 12dB
Power - Max	0.7W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 100mA, 5V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	332A-02
Supplier Device Package	332A-03, Style 2

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