MRF587 Details_MRF587 PDF Document_MACOM Technology Solutions-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	17V
Frequency - Transition	5.5GHz
Noise Figure (dB Typ @ f)	3dB @ 0.5GHz
Gain	13dB
Power - Max	-
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 50mA, 5V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	200°C (TJ)
Mounting Type	Stud Mount
Package / Case	244A-01
Supplier Device Package	244A-01, STYLE 1

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