BFP520FE6327 Details_BFP520FE6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.5V
Frequency - Transition	45GHz
Noise Figure (dB Typ @ f)	0.95dB @ 1.8GHz
Gain	22.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 20mA, 2V
Current - Collector (Ic) (Max)	40mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP

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