BFR181WE6327 Details_BFR181WE6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain	19dB
Power - Max	175mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 8V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	PG-SOT323-3

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