2SC4731S-AY Details_2SC4731S-AY PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 200mA, 2A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 500mA, 5V
Power - Max	1.5 W
Frequency - Transition	180MHz
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 No Tab
Supplier Device Package	FLP

Other

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