SI4505DY-T1-E3 Details_SI4505DY-T1-E3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V, 8V
Current - Continuous Drain (Id) @ 25°C	6A, 3.8A
Rds On (Max) @ Id, Vgs	18mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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