APTC60TAM21SCTPAG Details_APTC60TAM21SCTPAG PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	CoolMOS™
Package	Bulk
FET Type	6 N-Channel (3-Phase Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	116A
Rds On (Max) @ Id, Vgs	21mOhm @ 88A, 10V
Vgs(th) (Max) @ Id	3.6V @ 6mA
Gate Charge (Qg) (Max) @ Vgs	580nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 100V
Power - Max	625W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	SP6-P

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