IRF7501TRPBF Details_IRF7501TRPBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.4A
Rds On (Max) @ Id, Vgs	135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 15V
Power - Max	1.25W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package	Micro8™

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