NTMD3N08LR2 Details_NTMD3N08LR2 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	2.3A
Rds On (Max) @ Id, Vgs	215mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 25V
Power - Max	3.1W
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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