APTSM120AM08CT6AG Details_APTSM120AM08CT6AG PDF Document_Microsemi Corporation-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	370A (Tc)
Rds On (Max) @ Id, Vgs	10mOhm @ 200A, 20V
Vgs(th) (Max) @ Id	3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	1360nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	2300W
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP6
Supplier Device Package	SP6

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