AO6608 Details_AO6608 PDF Document_Alpha & Omega Semiconductor Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel Complementary
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V, 20V
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs	60mOhm @ 3.4A, 10V, 75mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3nC @ 4.5V, 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	235pF @ 15V, 510pF @ 10V
Power - Max	1.25W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	6-TSOP

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