SSM6N815R,LF Details_SSM6N815R,LF PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	U-MOSVIII-H
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Rds On (Max) @ Id, Vgs	103mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 15V
Power - Max	1.8W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	6-TSOP-F

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