NDM3000 Details_NDM3000 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	3 N and 3 P-Channel (3-Phase Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3A
Rds On (Max) @ Id, Vgs	90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 10V
Power - Max	1.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package	16-SOIC

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