TPC8408,LQ(S Details_TPC8408,LQ(S PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	6.1A, 5.3A
Rds On (Max) @ Id, Vgs	32mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 10V
Power - Max	450mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP

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