NTLLD4951NFTWG Details_NTLLD4951NFTWG PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.5A, 6.3A
Rds On (Max) @ Id, Vgs	17.4mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	605pF @ 15V
Power - Max	800mW, 810mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-WDFN (3x3)

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