IRF7902TRPBF Details_IRF7902TRPBF PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6.4A (Ta), 9.7A (Ta)
Rds On (Max) @ Id, Vgs	22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id	2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	6.9nC, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	580pF, 900pF @ 15V
Power - Max	1.4W (Ta), 2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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