CAS120M12BM2 Details_CAS120M12BM2 PDF Document_Cree/Wolfspeed-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Z-Rec®
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	193A (Tc)
Rds On (Max) @ Id, Vgs	16mOhm @ 120A, 20V
Vgs(th) (Max) @ Id	2.6V @ 6mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	378nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	6300pF @ 1000V
Power - Max	925W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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