HCT802 Details_HCT802 PDF Document_TT Electronics/Optek Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	90V
Current - Continuous Drain (Id) @ 25°C	2A, 1.1A
Rds On (Max) @ Id, Vgs	5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 25V
Power - Max	500mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-SMD, No Lead
Supplier Device Package	6-SMD

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