NTLJD3183CZTBG Details_NTLJD3183CZTBG PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.6A, 2.2A
Rds On (Max) @ Id, Vgs	68mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	355pF @ 10V
Power - Max	710mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Supplier Device Package	6-WDFN (2x2)

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