IRFHE4250DTRPBF Details_IRFHE4250DTRPBF PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	86A (Tc), 303A (Tc)
Rds On (Max) @ Id, Vgs	2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
Vgs(th) (Max) @ Id	2.1V @ 35µA, 2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	20nC, 53nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1735pF @ 13V, 4765pF @ 13V
Power - Max	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	32-PowerVFQFN
Supplier Device Package	32-PQFN (6x6)

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