IRFH4257DTRPBF Details_IRFH4257DTRPBF PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	25A
Rds On (Max) @ Id, Vgs	3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1321pF @ 13V
Power - Max	25W, 28W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	Dual PQFN (5x4)

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