SSM6N7002BFE,LM Details_SSM6N7002BFE,LM PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	200mA
Rds On (Max) @ Id, Vgs	2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	17pF @ 25V
Power - Max	150mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6

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