IRFI4212H-117P Details_IRFI4212H-117P PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	11A
Rds On (Max) @ Id, Vgs	72.5mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 50V
Power - Max	18W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-5 Full Pack
Supplier Device Package	TO-220-5 Full-Pak

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