RJK0222DNS-00#J5 Details_RJK0222DNS-00#J5 PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	14A, 16A
Rds On (Max) @ Id, Vgs	9.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	810pF @ 10V
Power - Max	8W, 10W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-WDFN Exposed Pad
Supplier Device Package	8-DFN (5x6)

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