IRF7343PBF Details_IRF7343PBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	4.7A, 3.4A
Rds On (Max) @ Id, Vgs	50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 25V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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