IRF9395MTRPBF Details_IRF9395MTRPBF PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	DirectFET™
Package	Bulk
FET Type	2 P-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs	7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	64nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	3241pF @ 15V
Power - Max	2.1W (Ta), 57W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MC
Supplier Device Package	DirectFET™ Isometric MC

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