APTM10DHM09T3G Details_APTM10DHM09T3G PDF Document_Microsemi Corporation-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	POWER MOS V®
Package	Bulk
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	139A
Rds On (Max) @ Id, Vgs	10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	9875pF @ 25V
Power - Max	390W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP3
Supplier Device Package	SP3

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