AON6912A Details_AON6912A PDF Document_Alpha & Omega Semiconductor Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A, 13.8A
Rds On (Max) @ Id, Vgs	13.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	910pF @ 15V
Power - Max	1.9W, 2.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	8-DFN (5x6)

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