APTM100H45FT3G Details_APTM100H45FT3G PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	4 N-Channel (H-Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25°C	18A
Rds On (Max) @ Id, Vgs	540mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4350pF @ 25V
Power - Max	357W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP3
Supplier Device Package	SP3

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