DMP25H18DLFDE-7 Details_DMP25H18DLFDE-7 PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3.5V, 10V
Rds On (Max) @ Id, Vgs	14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 10 V
Vgs (Max)	±40V
Input Capacitance (Ciss) (Max) @ Vds	81 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	600mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type E)
Package / Case	6-PowerUDFN

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