SFT1443-H Details_SFT1443-H PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	225mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	9.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 19W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TP
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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