NTMFS4C09NAT1G Details_NTMFS4C09NAT1G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.9 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1252 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	760mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads

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