XP161A1265PR-G Details_XP161A1265PR-G PDF Document_Torex Semiconductor Ltd-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	55mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	320 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	SOT-89
Package / Case	TO-243AA

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