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MOSFETs - Single
IXTH20N65X Picture

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IXTH20N65X

  • IXYS
  • New
  • MOSFET N-CH 650V 20A TO247
  • Datasheet download
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In Stock:1,386(Ref. price)
Qty.Unit PriceExt. Price
1
$8.03880
$8.03880
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1390 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
320W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Other
Price advantage, IXTH20N65X is available in stock and can be delivered on the same day
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