IRF7202TR Details_IRF7202TR PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 2.5W (Tc)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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