IRGB4045DPBF Details_IRGB4045DPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	12 A
Current - Collector Pulsed (Icm)	18 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 6A
Power - Max	77 W
Switching Energy	56µJ (on), 122µJ (off)
Input Type	Standard
Gate Charge	13 nC
Td (on/off) @ 25°C	27ns/75ns
Test Condition	400V, 6A, 47Ohm, 15V
Reverse Recovery Time (trr)	74 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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