APT80GP60B2G Details_APT80GP60B2G PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	*
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	100 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 80A
Power - Max	1041 W
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	T-MAX™ [B2]

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