HGT1S20N36G3VL Details_HGT1S20N36G3VL PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	395 V
Current - Collector (Ic) (Max)	37.7 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	1.9V @ 5V, 20A
Power - Max	150 W
Switching Energy	-
Input Type	Logic
Gate Charge	28.7 nC
Td (on/off) @ 25°C	-/15µs
Test Condition	300V, 10A, 25Ohm, 5V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	I2PAK (TO-262)

Other

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