IRG4BC10SD-LPBF Details_IRG4BC10SD-LPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	14 A
Current - Collector Pulsed (Icm)	18 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 8A
Power - Max	38 W
Switching Energy	310µJ (on), 3.28mJ (off)
Input Type	Standard
Gate Charge	15 nC
Td (on/off) @ 25°C	76ns/815ns
Test Condition	480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr)	28 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	TO-262

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