RJH60A83RDPD-A0#J2 Details_RJH60A83RDPD-A0#J2 PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 10A
Power - Max	51 W
Switching Energy	230µJ (on), 160µJ (off)
Input Type	Standard
Gate Charge	19.7 nC
Td (on/off) @ 25°C	31ns/54ns
Test Condition	300V, 10A, 5Ohm, 15V
Reverse Recovery Time (trr)	130 ns
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252

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