APT80GA90LD40 Details_APT80GA90LD40 PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 8™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	900 V
Current - Collector (Ic) (Max)	145 A
Current - Collector Pulsed (Icm)	239 A
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 47A
Power - Max	625 W
Switching Energy	1652µJ (on), 1389µJ (off)
Input Type	Standard
Gate Charge	200 nC
Td (on/off) @ 25°C	18ns/149ns
Test Condition	600V, 47A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	25 ns
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	TO-264

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