WG50N65DHWQ Details_WG50N65DHWQ PDF Document_WeEn Semiconductors-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	91 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
Power - Max	278 W
Switching Energy	1.7mJ (on), 600µJ (off)
Input Type	Standard
Gate Charge	160 nC
Td (on/off) @ 25°C	66ns/163ns
Test Condition	400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)	105 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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