IGB03N120H2ATMA1 Details_IGB03N120H2ATMA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	9.6 A
Current - Collector Pulsed (Icm)	9.9 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Power - Max	62.5 W
Switching Energy	290µJ
Input Type	Standard
Gate Charge	22 nC
Td (on/off) @ 25°C	9.2ns/281ns
Test Condition	800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	PG-TO263-3-2

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