92-0235 Details_92-0235 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	430 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	1.75V @ 5V, 14A
Power - Max	125 W
Switching Energy	-
Input Type	Logic
Gate Charge	27 nC
Td (on/off) @ 25°C	900ns/6µs
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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